Speaker
Description
The development of higher brilliance and faster repetition rate X-Ray sources offer higher throughput analysis opportunities for applications based on Tomography, Coherent Diffraction Imaging (CDI) or Ptychography. These benefits can be exploited with the recent advances in sCMOS (scientific Complementary Metal-Oxide Semiconductor) image sensors, which offer a unique combination of fast frame rates, high sensitivity thanks to ultra low-noise floor (<2e-) and high Quantum Efficiency (QE up to 95%), high dynamic range to yield highest contrast data and large area/small pixels options.
The recent introduction of direct detection sCMOS sensor versions now also offer high spatial and energy resolution options in the EUV range.
An overview of sCMOS architecture and performance is presented, with comparison to slower CCD (charge-coupled device) image sensors. Recently-developed back-illuminated sCMOS sensors are compared with previous generations of front-illuminated designs. Performance of direct versus indirect x-ray detection is compared, and an overview of scintillator types and optical coupling strategies is reviewed.
Finally, we give a brief overview of several applications that benefit from faster measurement throughput and other advances enabled by these technological improvements, including phase contrast X-ray tomography of soft tissue samples and high-harmonic generation spectroscopy.
