Speaker
Description
In extreme ultraviolet (EUV) lithography, high volume manufacturing recently started using a laser-produced plasma (LPP) source of 250-W power at 13.5 nm. However, development of a high-power EUV light source is still very important to overcome stochastic effects with a high throughput. The required EUV power to realize the 3-nm node and beyond with a high speed of future scanners is estimated to be more than 1 kW [1]. We have designed and studied an ERL-based EUV-FEL for future lithography [2-6] and showed that it can provide EUV power of more than 1 kW for ten scanners simultaneously. It is also upgradable to a “Beyond EUV” FEL light source that performs much finer pattering with shorter wavelength light (~6.7 nm). In addition, it can variably control the polarization of the EUV light, which might be utilized for high-NA lithography. Switching to the EUV-FEL light source from the LPP source can greatly reduce electric power consumption per scanner or 1-kW EUV power and it is suitable for sustainable semiconductor technologies and systems [7]. In this talk, I will present the ERL-based EUV-FEL light source for future lithography and the related activities.
[1] S. Inoue, Proc. of 4th EUV-FEL Workshop, Akihabara, Tokyo, Japan (2019).
[2] N. Nakamura et al., Proc. of ERL2015, Stony Brook, New York, USA, pp.4-9 (2015).
[3] N. Nakamura, R. Kato, T. Miyajima, M. Shimada, T. Hotei and R. Hajima, Journal of Physics: Conf. Series 874 (2017) 012013.
[4] H. Sakai et al., Proc. of SRF2017, pp.13-18 (2017).
[5] R. Kato, Proc. of 4th EUV FEL Workshop, Akihabara, Tokyo, Japan (2019).
[6] H. Kawata, N. Nakamura, H. Sakai, R. Kato and R. Hajima, J. Micro/Nanopattern. Mater. Metrol. 21(2), 021210 (2022).
[7] https://www.imec-int.com/en/expertise/cmos-advanced/sustainable-semiconductor-technologies-and-systems-ssts.
